Rohm auf der electronica 2016
SiC technology at a glance – making power electronics smaller, stronger and faster
Silicon carbide is a compound of silicon and carbon. It is produced using a crystal growth process of sublimation and exposure to high temperatures of about 2,000°C. Using this technology in power devices, ROHM, a leader in SiC applications, has achieved lower power consumption and more efficient operation. There are several benefits compared to conventional silicon:
SMALLER – System miniaturisation means reduced size and weight, which allows for improved weight distribution in motorsports and less power consumption in general.
STRONGER – Devices with SiC can work with higher voltages and currents, which increases power density and reduces switching losses even under high temperatures.
FASTER – The ultimate outcome of ROHM's partnership with Venturi. The best performance and maximised probability of speed.
The inverter for Formula E season three features embedded SiC Schottky diodes, making it 2 kg lighter than the inverter for season two. Electric efficiency has been increased by 1.7%, while the volume of heat extraction components has been reduced by 30%. But this is just a start. In season four, the SiC MOSFET integrated inverter will demonstrate drastic changes once again.
Wichtige Aspekte zum Antriebsstrang-HIL-Test
HIL-Simulatoren von National Instruments
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